S4-P7: Low-temperature hydrophobic wafer bonding for 1200V, 25A bi-directional Si UMOS IGBTs

A 1200V, 25A bi-directional silicon UMOS-IGBT has been successfully fabricated and characterized using a hydrophobic bonding process at low temperature (400°C) for the first time. The static and dynamic performance of our previous bi-directional DMOS-IGBT using a new developed bonding approach with glass carrier wafers are also shown in this paper as a comparison.