High Quality Non-polar/Semi-polar Semiconductor Device on Prominence and Depression Patterned Substrate and Manufacturing Method thereof

The present invention removes the piezoelectric phenomenon (piezoelectric effect) generated in the non-polar / semi-polar nitride semiconductor layer growth is possible sapphire crystal surface polarity of the nitride semiconductor active layer to form a nitride semiconductor crystal on, and etching the sapphire substrate with a textured structure pattern that by forming on the template (template) layer relates to a high-quality non-polar / semi-polar semiconductor devices and a method of manufacturing the same which reduce the defect density of the semiconductor device improve the internal quantum efficiency and light extraction efficiency. In the present invention, non-polar or semi-polar nitride growth template layer on a sapphire substrate having a crystal plane for a semiconductor layer and a method of manufacturing a semiconductor device forming a semiconductor device structure according to, by etching the sapphire substrate to form a textured structure pattern then, it discloses a method of forming the template layer comprising a nitride semiconductor layer and a GaN layer on the sapphire substrate on which the concave-convex pattern formed structure. Semiconductor optical device, a non-polar, semi-polar, a sapphire substrate, a concavo-convex, PSS, LED