V‐band 18.3 dB/1.6 dBm three‐stage amplifier with inductive self‐biasing in 130‐nm CMOS

The common source amplifier design with the inductive self-biasing is presented. The proposed design can establish the biasing and the impedance matching with two transmission line elements. Both theoretical and experimental verifications confirm that the three-stage prototype achieves a gain per stage of 6.1 dB, and the output P1dB of 1.6 dBm with 29 mW power consumption at 53 GHz based on the standard CMOS 130 nm 1P8M technology. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:409–413, 2016