Manufacture of integrated circuit device

PURPOSE: To provide a manufacturing method of an integrated circuit device wherein transition concentration is reduced on a first conductivity type semiconductor layer. CONSTITUTION: This manufacturing method is provided with the following; a process for forming a screen insulating layer on a semiconductor layer 2, a process for implanting impurities in the semiconductor layer 2 via the screen insulating layer, and forming an implantation region, a process for eliminating the screen insulating layer, a process for growing an oxide layer 36 of 1-4 nm in thickness, in the implantation region 18 after the screen insulating layer is eliminated, and a process for annealing the implantation region 18 after the oxide layer 36 is grown. Thereby the residual recrystallization damage is reduced, so that the transition concentration of an integrated circuit device is reduced. COPYRIGHT: (C)1995,JPO