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Evaluation of transient current of GaN HEMTs on Si under light
Evaluation of transient current of GaN HEMTs on Si under light
2012
Joka Takuya
Wakejima Akio
Egawa Takashi
Keywords:
Electronic engineering
High-electron-mobility transistor
Materials science
Optoelectronics
transient current
light irradiation
Correction
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