Design of CMOS Inverter Using Different Aspect Ratios

The aim of this paper is to show the effect of W/L ratio parameters of CMOS, which characterized the CMOS structure. It is also analysis the current value, threshold voltage value and other related parameters of CMOS inverter. MOSFET device is the 4 terminal devices GATE, DRAIN, SOURCE AND BODY (substrate). W/L is the most important factor of CMOS. Hence considering we can change the value of W/L of CMOS and then measure the physical parameters to reach the accepted goal using Microwind 3.1 software.