Influence of temperature on the formation of SiF2 molecules

Chemical etching of silicon in SF6 plasma is considered. Dependences of Si etching rate on pressure of reactive species are measured at two different temperatures. Atomic layer etching of silicon with F atoms is analyzed using theoretical results obtained by fitting the experimental data. It is found that at high pressure, the formation of SiF2 molecules is the etching-rate limiting process. As a result, dependences of Si etching rate on pressure of reactive species have pronounced maxima. The increase in temperature during Si etching in SF6 plasma shifts maximum etching rate to lower pressure. This phenomenon is caused by an increased chemisorption of F atoms on the surface. Display Omitted Dependence of Si etching rate in SF6 plasma on pressure has pronounced maximum.Maximum etching rate of silicon shifts to lower pressure with the increase in temperature.The shift is caused by increased chemisorption of F atoms on the surface.