Sub-Micron CMOS / MOS-Bipolar Hybrid TFTs for System Displays
2007
The characteristics of sub-micron CMOS- and MOS-bipolar hybrid TFTs fabricated on large-grain poly-Si films are presented. The MOS and hybrid TFTs with 0.5 mum-gate or base length exhibit an f max of 10 and 5.5 GHz respectively, showing great potential for the integration of analog functions, such as the LVDS front-end interface.
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