Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices
2009
Nanometer scale Ge2Sb2Te5 (GST) domains formed by immiscible mixture of GST-SiOx at room temperature and 180 °C show remarkable suppression in electrical and thermal conductivity. Thermal boundary resistance with increased GST-SiOx interface becomes crucial to the reduction in thermal conductivity. These conductivity reductions concurrently result in the reduction in programming current and power consumption in phase change memory devices.
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