Planar-junction, top-illuminated GaInAs/InP pin photodiode with bandwidth of 25 GHz

A top-illuminated GaInAs/InP pin photodiode has been produced in a planar-junction configuration, which combines high reliability (no change in dark current over 4700 h at 175 degrees C) with the widest bandwidth (25 GHz), and highest quantum efficiency (80% at 1.55 mu m), yet reported for this type of device.