Observation of room‐temperature blue shift and bistability in a strained InGaAs‐GaAs 〈111〉 self‐electro‐optic effect device

We have observed room‐temperature exciton blue shift with applied voltage in a 〈111〉 In0.1Ga0.9As‐GaAs p‐i‐n multiple quantum well modulator. We have also observed optically induced bistability in a symmetric self‐electro‐optic effect device circuit composed of these modulators. Very large (2.5:1) ratios of photocurrent were obtained with only 0–3 V applied bias.