Integrated wavelength demultiplexer‐receiver on InP

A detector stage comprising a photodiode, a field‐effect transistor, and a load resistor, and a wavelength demultiplexer have been monolithically integrated in the GaInAsP/InP material system. Chips were mounted into complete modules and operated in a 1.3 μm/1.55 μm bidirectional transmission link. At 576 Mbit/s and 10−9 bit error rate the sensitivity of the module was −21 dBm, while the intrinsic sensitivity of the receiver was determined to be −28 dBm.