High-energy electron irradiation effects on CdS 1¿x Se x quantum dots in borosilicate glass

The effect of 5- and 10-MeV electron irradiation and subsequent annealing upon the optical absorption of CdS 1 - x Se x quantum dots embedded in a borosilicate glass matrix is studied. Gradual smearing and vanishing of theconfinement-related maxima and a blue shift of the absorption edge are observed. The transformation of the spectra depends on the quantum dot composition and size as well as on the irradiating electrons' energy and fluence. The mechanisms responsible for the observed behavior are discussed. The radiation-induced changes can be related to ionization of the quantum dots with charge-carrier transfer between the quantum dots and the electron (hole) traps in the host matrix.