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Growth of InN and In rich InGaN by ``High Pressure Chemical Vapor Deposition'' (HPCVD)
Growth of InN and In rich InGaN by ``High Pressure Chemical Vapor Deposition'' (HPCVD)
2009
Max Buegler
Mustafa Alevli
Ramazan Atalay
Goksel Durkaya
Jielei Wang
Indika Senevirathna
Muhammad Jamil
Ian T. Ferguson
Nikolaus Dietz
Keywords:
Thin film
Chemical vapor deposition
Nitrogen
Raman spectroscopy
Inorganic chemistry
Optoelectronics
Materials science
high pressure
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