CDP: application of focus drilling
2009
The achievement of a depth of focus required for stable process conditions is one of the biggest challenges in
modern optical photolithography. There are several ways of improving the depth of focus. For line/space
layers, for instance, application of RET (Resolution Enhancement Technology) using scattering bars, phaseshift
masks or optimized illumination systems have shown good results. For contact and via layers the depth
of focus is limited and critical, due to the structure size of the holes, alternating pattern density and wafer
topology. A well known method of improving the depth of focus for contact and via layers is called focus
latitude enhancement exposure (FLEX) [1-3]. With FLEX, several focal planes are being exposed, i.e. each
during a separate exposure step. The main drawback is low throughput, as the total processing time rises
which each additional exposure.
In this paper, we investigate Nikon's CDP (continuous depth of focus expansion procedure) [4]. The CDP
option is applicable to modern scanning exposure tools [4-5]. A schematic view of the procedure is shown in
Fig. 1. The CDP value or CDP amplitude defines the tilt of the wafer and thus the range of focus in the resist,
as the focus plane migrates through the resist during the exposure. The main advantage of CDP, compared
to FLEX, is higher throughput, since focal planes are defined within a single exposure. A non-CDP exposure
may result in varying aerial images within resist thickness, therefore leading to decreased image contrast
within out-of-focus planes. As shown in Fig. 1 the averaged aerial images of a CDP exposure induce better
image contrast throughout the resist layer and therefore increase the focus window.
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