Boron Redistribution During Transient Thermal Metal Silicide Growth on Si
1984
We have used the heavy ion elastic recoil technique to study B distribution changes during Co and Ti di silicide formation on B implanted single crystal Si wafers. B diffuses to the interface of TiSi2 and Si and to the surface of CoSi2.
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
2
References
3
Citations
NaN
KQI