Real-time monitoring of Si1−xGex heteroepitaxial growth using laser light scattering and spectroscopic ellipsometry

Laser light scattering and real-time spectroscopic ellipsometry have been used as in situ monitors for heteroepitaxial growth of Si 1-x Ge x and Si layers. The techniques have been used to optimize conditions for growth of smooth, high quality epilayers and the potential indicated for real-time control of morphology, composition, and thickness.