Depth distribution of defects and impurities in diamond and cubic boron nitride after high‐energy ion implantation

Cathodoluminescence is employed to study the spatial distribution of radiation-induced defects and impurities in diamond and cubic boron nitride implanted with high-energy N, C, B, Ni, Co, Cu, and Xe ions. The results are compared with theoretical calculations made by moment method and Boltzmann equation. Experimental ion ranges correlate well with the corresponding theoretical values. With high-energy ion implantation, the spatial distribution of defect formation is mainly determined by the distribution of elastic energy deposition. Defect-stimulated diffusion of nitrogen, nickel, and xenon impurities is observed deep into the diamond crystal. [Russian Text Ignored].