Two-Dimensional Simulation ofSemiconductor Lasers andSemiconductor Optical Amplifiers using

Theridge-waveguide semiconductor laser andam- (2)wherethis structure isrefereed asLD_1.Sketch ofthe plifier issimulated. Comparison ofsimulation results ofstaticstructure isshowninFig.1.Thisisnominally laser structure. characteristics toexperiment hasshowngoodagreement. SimpleSimulation ofSOAhavebeenmadeonthis structure bysetting physical picture ofSOA recovery isdeveloped anditshows thatanyalternation ofthecarrier lifetimes intheactive regionupthelowfacetreflectivities. ofSOA canbeusedforspeed-up ofdevice response. Various Basictime-domain equations responsible forlight-matter combinations ofactive region doping havebeenconsidered asa interaction inthelaser structure areasfollows wayofrecovery acceleration. Simulation ofSOAresponse shows -I J_+ otal thatusing homogeneous doping ofactive layer, speed-up ofthe Rt (1) SOA response canbeachieved. Dopingofa thinpartofthe At e active layer results insmaller speed-up, ascompared tothecase Op 1 otal ofthewholeactive layer doping. Relative position ofdopedlayer At divJp e Rtp (2) within theactive layer plays noroleinresponse acceleration. e IndexTerms-Semiconductor optical amplifier, SOA,simula- aSm (_c_G c 1_AS m tion, gainrecovery, carrier recovery, SOAspeed-up. at - Te e +- / st Recombination termsareexpressible viaSRH-recombination,