Old Web
English
Sign In
Acemap
>
Paper
>
Surface Segregation and Dopant Compensation in Si delta-doped InSb and Al_xIn_1-xSb Grown by Molecular Beam Epitaxy
Surface Segregation and Dopant Compensation in Si delta-doped InSb and Al_xIn_1-xSb Grown by Molecular Beam Epitaxy
1998
Wei Liu
Kory John Goldammer
Marcelino Bicho Dos Santos
Keywords:
Secondary ion mass spectrometry
Hall effect
Surface reconstruction
Molecular beam epitaxy
Doping
Dopant
Electron density
Analytical chemistry
Chemistry
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]