Chemical vapor deposition apparatus and method of depositing a thin film using the same

PURPOSE: A chemical vapor deposition apparatus and a thin film depositing method using the same are provided to grow a thin film under a stable growth condition by accurately controlling the temperature of a processing gas supplied to a reaction chamber. CONSTITUTION: A reaction chamber (100) is formed with a sealed structure including an inner space. The reaction chamber includes a support unit (110) on which a wafer is located and a gas supply unit (120) which supplies a processing gas to a reaction space. A heat exchanging unit (200) heats or cools the processing gas. A control unit (300) controls the flow rate of the processing gas supplied according to the growth step of a thin film in the reaction chamber. The control unit detects the temperature difference of the processing gas at each step. The control unit selectively heats or cools the processing gas by controlling the operation of the heat exchanging unit.