22.3: Flexible Top‐gate Amorphous InGaZnO TFTs Array for AMOLED Applications

Flexible top-gate amorphous InGaZnO TFTs array on a colorless polyimide substrate for AMOLED applications was successfully fabricated at 200 °C for the first time. The light transmittance of polyimide substrate is 90%. The maximum field-effect mobility is 10.6 cm2/V-s, subthreshold swing is 0.3 V/decade, and the on/off current ratio is 108.