Phonon sidebands in photoluminescence of beryllium δ-doped GaAs/AlAs multiple quantum wells

We present a study of phonon sidebands in the photoluminescence spectra of Be acceptor-doped GaAs/AlAs multiple quantum wells at liquid nitrogen temperature. Up to two phonon satellites with a separation close to the GaAs longitudinal optical phonon energy are observed in the sideband of the photoluminescence. A theoretical analysis of the satellite-related photoluminescence lineshapes and their energetic position and impurity induced spectra is presented. The results show that the phonon satellites can be attributed to free-electron-Be acceptor transitions involving longitudinal optical phonon of GaAs - the host material of the studied quantum wells.