MOMBE growth of AlSb and AlGaSb using trimethylamine alane

Abstract MOMBE (metalorganic molecular beam epitaxy) growth of AlSb and AlGaSb using trimethylamine alane (TMAAl), triethylgallium (TEGa) and solid antimony (Sb 4 ) is reported for the first time. The growth rate of AlSb shows a monotonic increase with substrate temperature ( T sub ) and a decrease with increasing Sb flux. The activation energy for the AlSb growth is 14 kcal/mol at T sub > 460°C and 30 kcal/mol at T sub 3 . 4.2 K photoluminescence (PL) spectra for the undoped AlGaSb layers exhibit a sharp band-to-band transition with an intensity comparable to that for the GaSb bulk crystal.