Infrared Absorbance of SiN_x and SiC

LPCVD and PECVD techniques were used to deposit SiN_x and SiC thin films. The IR absorbance spectra of the films were acquired by using a Nicolet Magna 750 FTIR. The experiment results show that the LPCVD SiN_x had an absorbance peak in the range of 8～14 μm, and PECVD SiN_x and SiC had two absorbance peaks, which is in the range of 3～5 μm and 8～14 μm respectively. The IR absorbance of the films increased as the films thickness increase. The peak absorbance of SiN_x film of 1 μm thick can reach 0.92. Ion implantation technology was also utilized to change the IR absorbance of the materials.