Two-dimensional materials-based nonvolatile resistive memories and radio frequency switches

Abstract In this chapter, we demonstrated the application of two-dimensional (2D) monolayer atomic sheets (transition metal dichalcogenides and hexagonal boron nitride) in nonvolatile resistive memory using metal-insulator-metal vertical structure. These devices can be labeled as “atomristor,” which means the memristor effect in atomically thin nanomaterials. Among 2D memory devices, atomristor stands out due to the atomic thinness of the active layer, low switching voltage, forming-free characteristic, large ON/OFF current ratio, and fast switching speed. In the last section, another major application based on atomristor, monolayer MoS2-based radio frequency switch will be presented.