GaAs as a bright cryogenic scintillator for the detection of low-energy electron recoils from MeV/c2 dark matter

This article presents the measurements of the luminescence and scintillation under X-ray of undoped, Si-doped, and Si, B codoped gallium-arsenide (GaAs) samples at cryogenic temperature over a wide infrared (IR) region using Si and InGaAs photodetectors. The undoped GaAs has a narrow emission band at 838 nm (1.48 eV) and a low light output of about 2 ph/keV. The GaAs:Si has three broad luminescence bands at 830 nm (1.49 eV), 1070 nm (1.16 eV), and 1335 nm (0.93 eV) and a light output of about 67 ph/keV. GaAs:(Si, B) has four luminescence bands at 860 nm (1.44 eV), 930 nm (1.33 eV), 1070 nm (1.16 eV), and 1335 nm (0.93 eV) with a light yield of approximately 119 ph/keV. With advances in photodetection, GaAs promises to be a useful cryogenic scintillator for the detection of electron recoils from MeV/c2 dark matter.