C3N4 film deposited by synchrotron radiation assisted CVD

Abstract The CN x film has been deposited on silicon substrate by the synchrotron radiation assisted CVD from highly pure nitrogen and CH 3 CN at temperature as lower as 275°C, and the film is only deposited on the svnchrotron radiation irradiated area. The XPS analysis shows that the N1s and C1s are located at 398.5 and 284.5 eV, respectively, which are identical to the theory and experimental results of other groups. The structure of CN x at different depths implies that a transition layer exists between the film and substrate.