Electroluminescence of ZnSe enhanced by improved layered optimization structure

Abstract The electroluminescence thin-film device with layered optimization structure based on ZnSe emitting layer was deposited by electron-beam evaporation. Electroluminescence of ZnSe film, which has not appeared in device with traditional double insulator structure, was observed. According to this phenomenon, SiO 2 ultra-thin layer was inserted into the middle of ZnSe layer and the device with this kind of improved layered optimization structure was prepared. Its electroluminescence intensity is higher than that of the device with traditional layered optimization structure. The dependence of electroluminescence on applied voltage and frequency was studied in detail. The luminescence mechanism and the contribution of SiO 2 ultra-thin layer to the electroluminescence intensity of the device were discussed. This phenomenon can provide a way to obtain bright blue inorganic electroluminescence.