Formation of zinc blende GaN using the conversion technique

Abstract It has been found that GaAs grown on GaP substrate was converted to GaN by annealing in the flow of NH 3 . Using LPE, a GaAs layer of 5 μm thickness was grown on a GaP (111)B substrate. Then the GaAs layer was annealed in the flow of 100% NH 3 for 30–60 min at 800–850°C. The GaAs layer was completely converted to GaN. X-ray diffraction measurements suggested that the GaN layer had mainly the zinc blende structure.