Physical Modeling of Retention in Localized Trapping Nitride Memory Devices

A physical model enabling accurate prediction of the retention in localized trapping nitride memory devices is presented first. The crucial components of this model are a correct observation of the charge distribution before and after cycling, and a thorough understanding of the charge detrapping and redistribution occurring in the nitride. The model is then validated for a large range of temperatures and number of cycles, and two different technologies. Finally, the results are exploited to identify the limiting factors of the retention loss, key for further improvement of nitride memory devices.