Comparative study on performance of cubic AlxGa1−xN/GaN nanostructures MODFETs and MOS-MODFETs

Abstract We report some comparative results on cubic Al x Ga 1− x N/GaN nanostructures MODFET and MOS-MODFET. The drain current characteristics of cubic Al x Ga 1− x N/GaN MODFET and MOS-MODFET are simulated by changing the different device parameters such as Al content x and the cubic GaN buffer layer thickness using 2D next nano 3 numerical simulation software. Drift–diffusion model has taken for simulating the proposed device. These results clearly indicate that the transistor simulation with 5 nm isolator SiO 2 layer thickness under the gate, Al content of x  = 25% and 200 nm cubic GaN buffer layer thickness shows the tremendous I – V characteristics. Also, this structure shows an increase of the drain saturation current and a decrease in the threshold voltage. Moreover, our simulation results exhibited lower threshold voltage and higher drain current density of MOS-MODFET is a factor 30% higher than the same current of a conventional MODFET. The MODFET with 5 nm isolator SiO 2 layer thickness has been much better performance. To avoid current flow through the high conductive 3C-SiC substrate a 150 nm p -doped cubic GaN layer is deposited. A comparison between our experimental and simulation results are shown to be in good agreement for cubic Al 0.25 Ga 0.75 N/GaN nanostructures MOS-MODFET. The demonstrated MOS-MODFET will be attractive for the next-generation microwave and high power switching application fields.