Mask Inspection Technology for 65nm (hp) Technology Node and Beyond

The application of the high numerical aperture, 193nm‐ArF laser exposure system is expected to be extended to 65nm node device production and beyond. The extension of 193nm lithography means that the pattern transfer using this exposure system is done under lower k1 condition than previously. This leads to the increase of mask error enhancement factor (MEEF) in the exposure process. Since mask critical dimension (CD) uniformity and defects on a mask are more difficult to control, defect detection consistency with lithography wavelength for the mask inspection system is strongly required. A novel high‐resolution mask inspection platform is developed to enable the high‐quality mask defect inspection for 65–45nm node. The system is operated at wavelength of 198.5nm, which wavelength is nearly equal to that of the 193nm‐ArF laser exposure system. The defect detection performance of 20–60nm defect detection sensitivity is certified at the early stage test. The system capabilities for 65nm node inspection and b...