Crystallographic and Interfacial Characterization of Al 2 O 3 and ZrO 2 Dielectric Films Prepared by Atomic Layer Chemical Vapor Deposition on the Si Substrate

Crystallographic characteristics and interfacial structures of and dielectric films prepared by atomic layer chemical vapor deposition (ALCVD) were investigated at atomic scale by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS)/electron energy-loss spectroscopy (EELS) coupled with a field-emission transmission electron microscope. The results obtained from cross-sectional and plan-view specimens showed that the film was crystallized by annealing at a high temperature and its crystal system might be evaluated as either cubic or tetragonal phase. Whereas the film crystallized during deposition at a low temperature of ∼ was composed of both tetragonal and monoclinic phase. The interfacial thickness in both films was increased with the increased annealing temperature. Further, the interfacial structures of Xand films were discussed through analyses of EDS elemental maps and EELS spectra obtained from the annealed films, respectively.