Investigation Of Plasma Produced By High-Energy Low-Intensity Laser Pulses For Implantation Of Ge Ions Into Si And Sio2 Substrates

The development of implantation techniques requires investigation of laser plasma as a potential source of multiply charged ions. The laser ion source delivers ions with kinetic energy and a charge state dependent on the irradiated target material and the parameters of the laser radiation used. By the focusing the laser beam on the solid target the higher current densities of ions than by using other currently available ion sources can be produced. The crucial issue for efficiency of the ion implantation technology is selection of proper laser beam characteristics. Implantation of different kinds of laser‐produced ions into metals and organic materials were performed recently at the PALS Research Center in Prague, in cooperative experiments using 0.4‐ns iodine laser pulses having energies up to 750 J at wavelength of 1315 nm or up to 250 J at wavelength of 438 nm. In this contribution we describe the characterization and optimization of laser‐produced Ge ion streams as well as analysis of the direct impla...