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P‐36: Highly Reliable a‐IGZO TFT Gate Driver Circuit to Prevent Leakage Path in Depletion Mode Operation
P‐36: Highly Reliable a‐IGZO TFT Gate Driver Circuit to Prevent Leakage Path in Depletion Mode Operation
2020
Jungwoo Lee
Jongsu Oh
Eun Kyo Jung
KeeChan Park
Soo-Yeon Lee
Yong-Sang Kim
Keywords:
Thin-film transistor
Leakage (electronics)
Materials science
Optoelectronics
Gate driver
Correction
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