Sub-threshold time-resolved spectroscopy of Mid-UV AlGaN laser diode structures pseudomorphically grown on bulk AlN

Gregory A. Garrett,Paul Rotella,Hongen Shen,Michael Wraback,Thomas Wunderer,Christopher L. Chua,Zhihong Yang,John E. Northrup,Noble M. Johnson

Sub-threshold time-resolved spectroscopy of Mid-UV AlGaN laser diode structures pseudomorphically grown on bulk AlN

2012

Gregory A. Garrett
Paul Rotella
Hongen Shen
Michael Wraback
Thomas Wunderer
Christopher L. Chua
Zhihong Yang
John E. Northrup
Noble M. Johnson

AlGaN based heterostructures exhibit photo-pumped stimulated emission out to 237 nm with a switched from TE to TM polarized observed. PL lifetimes reflect the stronger exciton binding energy of the higher Al content material.

Keywords:

Optoelectronics
Spectroscopy
Laser diode
Photoluminescence
Time-resolved spectroscopy
Heterojunction
Physics
Exciton
Stimulated emission
Binding energy
Light-emitting diode
Semiconductor laser theory

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