Theoretical Analysis and Numerical Simulation of Terahertz Wave Generation and Modulation based on GaAs:O

In this paper, the generation and modulation of terahertz wave based on Oxygen-implanted GaAs (GaAs:O) is proposed and discussed. The theoretical analyses and numerical simulation results about the modulation characteristics of the terahertz wave using the proposed scheme have been obtained. Through comparing the numerical simulation results we can find that the information carried on the optical light can be transferred onto the generated terahertz wave and the power of the modulation side bands in terahertz frequency can keep stable in the whole modulation bandwidth. The relationship between the terahertz power and carrier lifetime has also been studied.