Calculation of the electric field in GaAs particle detectors (

When semi-insulating semiconductors are used as nuclear detectors, the influence of traps cannot be neglected. They are responsible for a smaller than expected depletion width (active layer) of the detector and for the partial trapping of the charge carriers which reduce the charge collection efficiency (c.c.e.) of the detector defined as the ratio of measured-to-deposited charge in the detector. In this work we have adopted a numerical approach to deduce the ionized charge and the electric-field distribution, E(x), by solving the coupled transport and Poisson equations in one dimension. In the literature, a similar work has been recently published [1]. In the next sections, the principles and the assumptions of the model are outlined and the comparison with the results obtained in the previous work [1] are reported.