Non-contact temperature measurement of silicon wafers based on the combined use of transmittance and radiance

Abstract We propose a non-contact temperature measurement method that combines the temperature dependence of transmittance below 600 °C and radiation thermometry above 600 °C. The combined method uses a polarization technique and the Brewster angle between air and a dielectric film such as SiO 2 or Si 3 N 4 grown on silicon wafers. A prominent feature of this method is that both measurements of transmittance and radiance are performed with the same geometrical arrangement. For a semitransparent wafer, the measurement of p-polarized transmittance at the wavelengths of 1.1, 1.2 and 1.3 μm enables temperature measurement in the range from room temperature to 600 °C. For an opaque wafer above 600 °C, the p-polarized radiation thermometry at the wavelength of 4.5 μm allows the temperature measurement without the emissivity problem. The combined method with the use of transmittance and radiance is valid in the entire temperature range irrespective of variations of film thickness and resistivity.