Ultra-thin (EOT=3/spl Aring/) and low leakage dielectrics of La-alminate directly on si substrate fabricated by high temperature deposition

Ultra-thin (0.31 nm) LaAlO 3 gate dielectrics with excellent electrical characteristics were fabricated by a novel high temperature deposition process. The key to achieve it is to form stable La-O-Al bonds in as-deposited phase by high temperature deposition. That process suppresses the oxygen exchange for the diffusion and the resultant interface layer formation