SIMS analysis of buried silicon nitride layers formed by high dose implantation of 14N and 15N

Abstract In order to obtain more information about the formation of buried layers of insulating material, we have undertaken a series of experiments in which we added incremental doses of the stable isotope, 15 N, as a tracer, during the ion beam synthesis of the buried Si 3 N 4 layers. The atomic processes causing tracer redistribution are discussed with particular reference to those occurring during post implant annealing.