Silicon wafers station area exposure method displacement measuring six degrees of freedom

Six degrees of freedom of displacement measurement station silicon wafers exposed regions, displacement measuring six degrees of freedom applied to exposed areas of the wafer stage. Fixed below the plane grating and wafer stage motion stage comprising an array of coils, magnet array moving platform, fixed to the read head gap a coil array, the centerline and the centerline of the read head coincides with the lens; measuring beam enters the readhead measurement region is formed on the planar grating, measuring center and the center region of the exposed region of the same vertical line; and the exposure region covers that portion of the motion stage is approximately rigid, when the motion or movement due to the vibration table is deformed by the readhead measured six degrees of freedom of displacement measurement area to give six degrees of freedom of displacement solver exposed areas. Displacement measuring six degrees of freedom to achieve a wafer table during the movement of the exposure area at any time, reducing complexity measure, improve the measurement accuracy, in particular a flexible motion stage still accurately measure the six degrees of freedom at any time the displacement is large exposure area.