Semiconductor device having a low dielectric constant film
2001
(57) Abstract: A method for manufacturing a semiconductor device, a second insulating film is deposited on the first insulating film, forming an opening by patterning the second insulating film, further It includes the step of etching the first insulating film while using said second insulating film as a mask, using a low dielectric constant film as the second insulating film.
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI