High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy

We report the performance of 745-nm laser diodes (LDs) utilizing InP/InGaP quantum structures (quantum dots + quantum dashes) grown by using migration-enhanced epitaxy method. The photoluminescence of the LD structures before the fabrication of the LDs shows two peaks, around 800 nm and 750 nm, attributed to quantum dots and dashes, respectively. The lasing wavelength is thought to the result from quantum dashes instead of ground states of QDs. The pulse optical power of the LD is above 600 mW at room temperature.