Design of rugged High Voltage high power P-channel silicon MOSFET for plasma applications

High voltage P-channel RF MOSFET was designed and fabricated by a proprietary self-aligned VDMOS process. When this device is used for class C application at an operating frequency of 40.68 MHz and drain bias of 125 V, the CW output power can reach 350 W, and power gain is 18 dB. Therefore, this 500 V P-channel MOSFET can be used as high side switch transistor in half bridge circuit to generate more RF power for plasma applications up to 40.68 MHz.