Effect of Sb doping on point defect ensemble in MOVPE - GaAs

Abstract Metalorganic vapor phase epitaxial GaAs doped with Sb in concentration limits 4×10 17 – 5×10 18 cm −9 , corresponding to low defect density and high electrical parameters of the layers has been investigated. An effect of the isoelectronic dopant on GaAs point defect ensemble has been revealed. From low temperature photoluminescence studies it has been shown that Sb doping leads to reduction of the emission bands attributed to C and Si and to (V Ga -D) complexes.