Effect of implantation energy on the defect formation in SIMOX

Silicon-on-insulator material synthesized by oxygen implantation (SIMOX) offers the advantages of thickness uniformity and moderate defect density. This makes it a leading candidate for integrated circuit fabrication in the deep submicron (0.25 /spl mu/m) regime. Low-dose SIMOX has high densities of crystalline and BOX defects. While the parameters for reduction of these defects have not been realized fully, it can be reasonably stated that the as-implanted oxygen profile has a crucial role in the subsequent development of microstructure. Implantation at lower doses (<200 keV) is potentially attractive from the perspective of reduced implant damage and a tighter oxygen profile. Possible additional benefits are in terms of reduced equipment cost and the ability to realize SIMOX with ultra-thin (/spl les/200 /spl Aring/) top-silicon layer. We have compared the effect of two implant energies, namely 200 keV and 120 keV, on the defect formation.