Evaluation of high-performance SOI complementary BiCMOS devices by using test structures

We used new test structures to evaluate the performance of complementary bipolar transistors fabricated on a SOI substrate by a new 0.35 /spl mu/m complementary BiCMOS process. The fabricated NPN transistors have a cut-off frequency (f/sub T/) of 10.5 GHz at a C-E breakdown voltage of 19.5 V and the PNP transistors have f/sub T/ of 6.0 GHz at 17.8 V. The test structure measurement showed that the high performance is due to the new isolation structure of the BiCMOS transistor and its layout.