Determination of Composition and Linear Lattice Expansion Coefficient in Si 1−x Ge x /Si Thin Films by Simulation of X-Ray Rocking Curves

By simulation of X-ray rocking curves of Si-Ge alloys grown on Si by molecular beam epitaxy and of Ge implanted samples, the Ge composition, the linear lattice expansion coefficient, the strain depth-distribution and the static Debye-Waller factor in the MBE alloys have been determined.